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TPA3136D2PWPR Datasheet(PDF) 6 Page - Texas Instruments |
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TPA3136D2PWPR Datasheet(HTML) 6 Page - Texas Instruments |
6 / 35 page 6 TPA3136D2, TPA3136AD2 SLOS938D – MAY 2016 – REVISED MARCH 2017 www.ti.com Product Folder Links: TPA3136D2 TPA3136AD2 Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) TPA3136D2/TPA3 136AD2 UNIT PWP (HTSSOP) 28 PINS RθJA Junction-to-ambient thermal resistance 30.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 33.5 °C/W RθJB Junction-to-board thermal resistance 17.5 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 7.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W (1) Using the TPA3136D2 EVM (SLOU444), unless otherwise noted. 7.5 Electrical Characteristics TA = 25°C, AVCC = PVCC = 12 V, RL = 6 Ω (unless otherwise noted). (1) Over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DC CHARACTERISTICS | VOS | Class-D output offset voltage (measured differentially) VI = 0 V, Gain = 26 dB 1.5 15 mV ICC Quiescent supply current SD = 2 V, no load, 300 ohm Ferrite Bead + 1nF Output Filter 35 40 mA ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load 40 60 µA rDS(on) Drain-source on-state resistance IO = 500 mA, TJ = 25°C Excluding Metal and Bond Wire Resistance High Side 240 mΩ Low side 240 G Gain 25 26 27 dB ton Turn-on time SD = 2 V 14 ms tOFF Turn-off time SD = 0.8 V 2.5 µs GVDD Gate drive supply IGVDD = 2 mA 6.4 6.9 7.4 V tDCDET DC detect time VRINN = 3.1 V and VRINN = 2.9 V, or VRINN = 2.9 V and VRINN = 3.1 V 950 ms AC CHARACTERISTICS PSRR Power supply ripple rejection 200-mVPP ripple at 1 kHz, Gain = 26 dB, Inputs ac-coupled to GND –65 dB PO Continuous output power THD+N = 10%, f = 1 kHz 10 W PO Continuous output power THD+N = 10%, f = 1 kHz, PVCC = 13 V, RL = 8 Ω 10 W PO Continuous output power, PBTL (mono) THD+N = 10%, f = 1 kHz, PVCC = 13 V, RL = 4 Ω 20 W THD+N Total harmonic distortion + noise f = 1 kHz, PO = 5 W (half-power) 0.06% Vn Output integrated noise 20 Hz to 22 kHz, A-weighted filter, Gain = 26 dB 91 µV –81 dBV Crosstalk VO = 1 Vrms, Gain = 26 dB, f = 1 kHz –75 dB SNR Signal-to-noise ratio Maximum output at THD+N < 1%, f = 1 kHz, Gain = 26 dB, A-weighted 102 dB OTE Thermal trip point 150 °C Thermal hysteresis 15 °C 7.6 Switching Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER MIN NOM MAX UNIT fOSC, SS Oscillator frequency, Spread Spectrum ON 255 315 355 kHz |
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