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M74HCT245M1R Datasheet(PDF) 4 Page - STMicroelectronics |
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M74HCT245M1R Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 9 page M74HCT245 4/9 CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit) TEST CIRCUIT CL = 50pF/150pF or equivalent (includes jig and probe capacitance) R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance DIR, G 5 101010 pF CI/OUT Output Capacitance An, Bn 13 pF CPD Power Dissipation Capacitance (note 1) 41 pF TEST SWITCH tPLH, tPHL Open tPZL, tPLZ VCC tPZH, tPHZ GND |
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