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2SC5183 Datasheet(PDF) 1 Page - NEC |
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2SC5183 Datasheet(HTML) 1 Page - NEC |
1 / 21 page PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: The following part numbers The following part numbers The following part numbers The following part numbers The following part numbers from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not recommended for new design. recommended for new design. recommended for new design. recommended for new design. recommended for new design. Please call sales office for Please call sales office for Please call sales office for Please call sales office for Please call sales office for details: details: details: details: details: NE68730 NE68730 NE68730 NE68730 NE68730 NE68733 NE68733 NE68733 NE68733 NE68733 NE68739 NE68739 NE68739 NE68739 NE68739 NE68739R NE68739R NE68739R NE68739R NE68739R PART NUMBER1 NE68718 NE68719 NE68730 NE68733 NE68739/39R EIAJ2 REGISTERED NUMBER 2SC5185 2SC5186 2SC5184 2SC5182 2SC5183/83R PACKAGE OUTLINE 18 19 30 33 39/39R SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 2 V, IC = 20 mA, f = 2.0 GHz GHz 10 13 9 11 9 11 9 12 7.5 10 fT Gain Bandwidth Product at VCE = 1 V, IC = 10 mA, f = 2.0 GHz GHz 8 11 7 9 7 9 7 10 7 8.5 NFMIN Minimum Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz dB 1.3 2.0 1.3 2.0 1.3 2.0 1.3 2.0 1.3 2.0 NFMIN Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.0 GHz dB 1.3 2.0 1.3 2.0 1.3 2.0 1.3 2.0 1.3 2.0 |S21e|2 Insertion Power Gain at VCE = 2V, IC =20 mA, f = 2.0 GHz dB 8 11 8.5 10 7 8.5 7 8.5 7.5 10 |S21e|2 Insertion Power Gain at VCE = 1V, IC =10 mA, f = 2.0 GHz dB 7.5 9 6 7.5 6 7.5 6 7.5 7 8.5 hFE Forward Current Gain3 at VCE = 2 V, IC = 20 mA 70 140 70 140 70 140 70 140 70 140 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100 CRE4 Feedback Capacitance at VCB = 2 V, IE = 0 mA, f = 1 MHz pF 0.3 0.6 0.4 0.8 0.4 0.8 0.4 0.8 0.4 0.8 PT Total Power Dissipation mW 90 90 90 90 90 RTH(J-A) Thermal Resistance (Junction to Ambient) °C/W 833 1250 833 625 625 RTH(J-C) Thermal Resistance (Junction to Case) °C/W SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES 30 (SOT 323 STYLE) 18 (SOT 343 STYLE) 39 (SOT 143 STYLE) 33 (SOT 23 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 39R (SOT 143R STYLE) DESCRIPTION The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent perfor- mance at low voltage/low current makes this series an ideal choice for portable wireless applications at 1.6, 1.9 and 2.4 GHz. The NE687 die is available in six different low cost plastic surface mount package styles. ELECTRICAL CHARACTERISTICS (TA = 25°C) • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 2. Electronic Industrial Association of Japan. California Eastern Laboratories 3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. |
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