PESD3V3L5UY datasheet(6/11 Pages) PHILIPS

No. de pieza	PESD3V3L5UY

Descripción Electrónicos	Low capacitance 5-fold ESD protection diode arrays in SOT363 package

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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6 / 11 page

2004 Mar 23

6

Philips Semiconductors

Product speciﬁcation

Low capacitance 5-fold ESD protection

diode arrays in SOT363 package

PESD3V3L5UY;

PESD5V0L5UY

GRAPHICAL DATA

001aaa208

tp (µs)

1104

103

10

102

10

102

Ppp

(W)

1

Fig.4

Peak pulse power dissipation as a function

of pulse time; typical values.

Tamb =25 °C.

Ipp = 8/20 µs exponentially decaying waveform; see Fig.2.

001aaa209

0.4

0.8

0.2

0.6

1.0

0

Tj (°C)

0

150

100

50

Ppp(Tj)

Ppp(Tj=25°C)

Fig.5

Relative variation of peak pulse power as a

function of junction temperature; typical

values.

VR (V)

05

4

23

1

(1)

(2)

001aaa210

10

5

15

25

20

Cd

(pF)

0

Fig.6

Diode capacitance as a function of reverse

voltage; typical values.

(1) PESD3V3L5UY.

(2) PESD5V0L5UY.

f = 1 MHz; Tamb =25 °C.

001aaa211

Tj (°C)

−75

−25

175

125

25

75

1

10

10−1

IR(Tj)

IR(Tj=25°C)

Fig.7

Relative variation of reverse leakage

current as a function of junction

temperature; typical values.

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PESD3V3L5UY Datasheet(PDF) 6 Page - NXP Semiconductors

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