EC732315 datasheet(1/4 Pages) E-CMOS

No. de pieza	EC732315

Descripción Electrónicos	P-Channel MOS

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Fabricante Electrónico	E-CMOS [E-CMOS Corporation]

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EC732315

P-Channel MOS

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 4

4H15N-Rev.F002

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive

avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power

switching application and a wide variety of other applications.

Features

◆ Advanced MOSFET process technology

◆ Special designed for PWM, load switching and general purpose applications

◆ Ultra low on-resistance with low gate charge

◆ Fast switching and reverse body recovery

◆ 150℃ operating temperature

Main Product Characteristics

ABSOLUTE MAXIMUM RATINGS

Thermal Resistance

VDSS

-20V

RDS(on)

114mΩ (typ.)

ID

-3A

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V(Note 1)

-3

A

ID @ TC = 70°C

Continuous Drain Current, VGS @ 10V(Note 1)

-2.4

IDM

Pulsed Drain Current(Note 2)

-15

PD @TC = 25°C

Power Dissipation

SOT-23

0.4

W

Linear Derating Factor

0.011

W/°C

VDS

Drain-Source Voltage

-20

V

VGS

Gate-to-Source Voltage

±12

V

TJ TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Symbol

Characterizes

Typ.

Max.

Units

RθJA

Junction-to-ambient (t

≤ 10s) (Note 3)

80

100

℃/W

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EC732315 Datasheet(PDF) 1 Page - E-CMOS Corporation

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