FCB11N60 datasheet(3/8 Pages) FAIRCHILD

No. de pieza	FCB11N60

Descripción Electrónicos	600V N-Channel MOSFET

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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FCB11N60 Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

* Notes :

1. 250

µs Pulse Test

2. T

C

= 25

oC

V

DS

, Drain-Source Voltage [V]

2

468

10

-1

10

0

10

1

* Note

1. V

DS

= 40V

2. 250

µs Pulse Test

-55

oC

150

oC

25

oC

V

GS

, Gate-Source Voltage [V]

0

5

10

15

20

25

30

35

40

0.0

0.2

0.4

0.6

0.8

1.0

V

GS

= 20V

V

GS

= 10V

* Note : T

J

= 25

oC

I

D

, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

-1

10

0

10

1

25

oC

150

oC

* Notes :

1. V

GS

= 0V

2. 250

µs Pulse Test

V

SD

, Source-Drain Voltage [V]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

* Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS

, Drain-Source Voltage [V]

0

5

10

15

20

25

30

35

40

45

0

2

4

6

8

10

12

V

DS

= 250V

V

DS

= 100V

V

DS

= 400V

* Note : I

D

= 11A

Q

G

, Total Gate Charge [nC]

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FCB11N60 Datasheet(PDF) 3 Page - Fairchild Semiconductor

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