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CSD25501F3 Datasheet(PDF) 3 Page - Texas Instruments

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No. de Pieza. CSD25501F3
Descripción  –20-V P-Channel FemtoFET MOSFET
Descarga  13 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

CSD25501F3 Datasheet(HTML) 3 Page - Texas Instruments

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CSD25501F3
www.ti.com
SLPS692 – OCTOBER 2017
Product Folder Links: CSD25501F3
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, IDS = –250 μA
–20
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = –16 V
–50
nA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –6 V
–50
nA
VDS = 0 V, VGS = –16 V
–1
mA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, IDS = –250 μA
–0.45
–0.75
–1.05
V
RDS(on)
Drain-to-source on-resistance
VGS = –1.8 V, IDS = –0.1 A
120
260
m
VGS = –2.5 V, IDS = –0.4 A
86
125
VGS = –4.5 V, IDS = –0.4 A
64
76
gfs
Transconductance
VDS = –2 V, IDS = –0.4 A
3.4
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = –10 V,
ƒ = 100 kHz
295
385
pF
Coss
Output capacitance
70
91
pF
Crss
Reverse transfer capacitance
4.1
5.3
pF
RG
Series gate resistance
33
RC
Series clamp resistance
10,000
Qg
Gate charge total (–4.5 V)
VDS = –10 V, IDS = –0.4 A
1.02
1.33
nC
Qgd
Gate charge gate-to-drain
0.09
nC
Qgs
Gate charge gate-to-source
0.45
nC
Qg(th)
Gate charge at Vth
0.36
nC
Qoss
Output charge
VDS = –10 V, VGS = 0 V
1.8
nC
td(on)
Turnon delay time
VDS = –10 V, VGS = –4.5 V,
IDS = –0.4 A, RG = 0 Ω
474
ns
tr
Rise time
428
ns
td(off)
Turnoff delay time
1154
ns
tf
Fall time
945
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = –0.4 A, VGS = 0 V
–0.73
–0.95
V
Qrr
Reverse recovery charge
VDS= –10 V, IF = –0.4 A, di/dt = 200 A/μs
3.0
nC
trr
Reverse recovery time
7.4
ns
(1)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
(2)
Device mounted on FR4 material with minimum Cu mounting area.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
TYPICAL VALUES
UNIT
RθJA
Junction-to-ambient thermal resistance(1)
90
°C/W
Junction-to-ambient thermal resistance(2)
255
°C/W


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