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CSD25501F3 Datasheet(PDF) 1 Page - Texas Instruments

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No. de Pieza. CSD25501F3
Descripción  –20-V P-Channel FemtoFET MOSFET
Descarga  13 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD25501F3 Datasheet(HTML) 1 Page - Texas Instruments

 
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD25501F3
SLPS692 – OCTOBER 2017
CSD25501F3 –20-V P-Channel FemtoFET™ MOSFET
1
1 Features
1
Low On-Resistance
Ultra-Low Qg and Qgd
Ultra-Small Footprint
0.7 mm × 0.6 mm
Low Profile
0.22-mm Max Height
Integrated ESD Protection Diode
Lead and Halogen Free
RoHS Compliant
2 Applications
Optimized for Load Switch Applications
Battery Applications
Handheld and Mobile Applications
3 Description
This
–20-V,
64-mΩ,
P-Channel
FemtoFET™
MOSFET is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing a substantial
reduction in footprint size. The integrated 10-k
clamp resistor (RC) allows the gate voltage (VGS) to
be operated above the maximum internal gate oxide
value of –6 V depending on duty cycle. The gate
leakage (IGSS) through the diode increases as VGS is
increased above –6 V.
Product Summary
TA = 25°C
TYPICAL VALUE
UNIT
VDS
Drain-to-Source Voltage
–20
V
Qg
Gate Charge Total (–4.5 V)
1.02
nC
Qgd
Gate Charge Gate-to-Drain
0.09
nC
RDS(on)
Drain-to-Source
On-Resistance
VGS = –1.8 V
120
m
VGS = –2.5 V
86
VGS = –4.5 V
64
VGS(th)
Threshold Voltage
–0.75
V
Device Information(1)
DEVICE
QTY
MEDIA
PACKAGE
SHIP
CSD25501F3
3000
7-Inch Reel
Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
Tape
and
Reel
CSD25501F3T
250
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C (unless otherwise stated)
VALUE
UNIT
VDS
Drain-to-Source Voltage
–20
V
VGS
Gate-to-Source Voltage
–20
V
ID
Continuous Drain Current(1)
–3.6
A
IDM
Pulsed Drain Current(1)(2)
–13.6
A
PD
Power Dissipation(1)
500
mW
V(ESD)
Human-Body Model (HBM)
4000
V
Charged-Device Model (CDM)
2000
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150
°C
(1) Typical RθJA = 255°C/W mounted on FR4 material with
minimum Cu mounting area.
(2) Pulse duration
≤ 100 μs, duty cycle ≤ 1%.
Typical Part Dimensions
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