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LM43601-Q1 Datasheet(PDF) 6 Page - Texas Instruments |
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LM43601-Q1 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 53 page 6 LM43601-Q1 SNVSAA0B – JULY 2015 – REVISED NOVEMBER 2017 www.ti.com Product Folder Links: LM43601-Q1 Submit Documentation Feedback Copyright © 2015–2017, Texas Instruments Incorporated Electrical Characteristics (continued) Limits apply over the recommended operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Minimum and Maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: VIN = 12 V, VOUT = 3.3 V, FS = 500 kHz. PARAMETER CONDITIONS MIN TYP MAX UNIT (1) Specified by design (2) Measured at package pins VOLTAGE REFERENCE (FB PIN) VFB Feedback voltage TJ = 25ºC 1.009 1.016 1.023 V TJ = -40ºC to 125ºC 0.999 1.016 1.039 ILKG-FB Input leakage current at FB pin FB = 1.016 V 0.2 65 nA THERMAL SHUTDOWN TSD (1) Thermal shutdown Shutdown threshold 160 ºC Recovery threshold 150 CURRENT LIMIT AND HICCUP IHS-LIMIT Peak inductor current limit 2.07 2.45 2.71 A ILS-LIMIT Valley Inductor current limit 0.94 1.1 1.25 A SOFT START (SS/TRK PIN) ISSC Soft-start charge current 1.17 2.2 2.85 µA RSSD Soft-start discharge resistance UVLO, TSD, OCP, or EN = 0 V 16 kΩ POWER GOOD (PGOOD PIN) VPGOOD-HIGH Power-good flag overvoltage tripping threshold % of FB voltage 110% 113% VPGOOD-LOW Power-good flag undervoltage tripping threshold % of FB voltage 83% 90% VPGOOD-HYS Power-good flag recovery hysteresis % of FB voltage 6% RPGOOD PGOOD pin pulldown resistance when power bad LM43601-Q1: VEN = 3.3 V 40 125 Ω LM43601-Q1: VEN = 0 V 60 150 LM43601A-Q1: VEN = 3.3 V 69 150 LM43601A-Q1: VEN = 0 V 150 350 MOSFETS(2) RDS-ON-HS High-side MOSFET ON-resistance IOUT = 1 A VBIAS = VOUT = 3.3 V 419 mΩ RDS-ON-LS Low-side MOSFET ON-resistance IOUT = 1 A VBIAS = VOUT = 3.3 V 231 mΩ |
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