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TC58FVM5T2AXB65 Datasheet(PDF) 7 Page - Toshiba Semiconductor |
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TC58FVM5T2AXB65 Datasheet(HTML) 7 Page - Toshiba Semiconductor |
7 / 63 page TC58FVM5(T/B)(2/3)A(FT/XB)65 2003-01-29 7/63 SIMULTANEOUS READ/WRITE OPERATION The TC58FVM5T2A/B2A/T3A/B3A features a Simultaneous Read/Write operation. The Simultaneous Read/Write operation enables the device to simultaneously write data to or erase data from a bank while reading data from another bank. The TC58FVM5T2A/B2A/T3A/B3A has a total of four banks (4Mbits: 12Mbits: 12Mbits: 4Mbits ). Banks can be switched between using the bank addresses (A20~A18). For a description of bank blocks and addresses, please refer to the Block Address Table and Block Size Table. The Simultaneous Read/Write operation cannot perform multiple operations within a single bank. The table below shows the operation modes in which simultaneous operation can be performed. Note that during Auto-Program execution or Auto Block Erase operation, the Simultaneous Read/Write operation cannot read data from addresses in the same bank which have not been selected for operation. Data from these addresses can be read using the Program Suspend or Erase Suspend function, however. SIMULTANEOUS READ/WRITE OPERATION STATUS OF BANK ON WHICH OPERATION IS BEING PERFORMED STATUS OF OTHER BANKS Read Mode ID Read Mode (1) Auto-Program Mode Auto-Page Program Mode Fast Program Mode (2) Program Suspend Mode Auto Block Erase Mode Auto Multiple Block Erase Mode (3) Erase Suspend Mode Program during Erase Suspend Program Suspend during Erase Suspend CFI Mode Read Mode (1) Only Command Mode is valid. (2) Including times when Acceleration Mode is in use. (3) If the selected blocks are spread across all four banks, simultaneous operation cannot be carried out. OPERATION MODES In addition to the Read, Write and Erase Modes, the TC58FVM5T2A/B2A/T3A/B3A features many functions including block protection and data polling. When incorporating the device into a deign, please refer to the timing charts and flowcharts in combination with the description below. READ MODE (PAGE READ) To read data from the memory cell array, set the device to Read Mode. In Read Mode the device can perform high-speed random access and Page Read as asynchronous ROM. The device is automatically set to Read Mode immediately after power-on or on completion of automatic operation. A software reset releases ID Read Mode and the lock state which the device enters if automatic operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the device and resets it to Read Mode. When reading data without changing the address immediately after power-on, either input a hardware Reset or change CE from H to L. |
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