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4N26.S Datasheet(Hoja de datos) 3 Page - Fairchild Semiconductor

No. de Pieza. 4N26.S
Descripción  GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
Descarga  15 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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 3 page
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6/15/05
Page 3 of 15
© 2005 Fairchild Semiconductor Corporation
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25
4N26
4N27
4N28
4N35
4N36
4N37
H11A1
H11A2
H11A3
H11A4
H11A5
Note
* Typical values at TA = 25°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Symbol
Min
Typ*
Max
Unit
EMITTER
Input Forward Voltage
(IF = 10 mA)
VF
1.18
1.50
V
Reverse Leakage Current
(VR = 6.0 V)
IR
0.001
10
µA
DETECTOR
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IF = 0)
BVCEO
30
100
V
Collector-Base Breakdown Voltage
(IC = 100 µA, IF = 0)
BVCBO
70
120
V
Emitter-Collector Breakdown Voltage
(IE = 100 µA, IF = 0)
BVECO
710
V
Collector-Emitter Dark Current
(VCE = 10 V, IF = 0)
ICEO
1
50
nA
Collector-Base Dark Current
(VCB = 10 V)
ICBO
20
nA
Capacitance
(VCE = 0 V, f = 1 MHz)
CCE
8pF
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Min
Typ*
Max
Units
Input-Output Isolation Voltage
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
VISO
5300
Vac(rms)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec)
7500
Vac(pk)
Isolation Resistance
(VI-O = 500 VDC)
RISO
1011
Isolation Capacitance
(VI-O = &, f = 1 MHz)
CISO
0.5
pF
(‘-M’ White Package)
0.2
2
pF




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