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CAT93HC46PE-1.8TE13 Datasheet(PDF) 6 Page - Catalyst Semiconductor

No. de pieza CAT93HC46PE-1.8TE13
Descripción Electrónicos  1-kb High Speed Microwire Serial EEPROM
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Fabricante Electrónico  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT93HC46PE-1.8TE13 Datasheet(HTML) 6 Page - Catalyst Semiconductor

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CAT93HC46
Doc. No. 1008, Rev. G
Erase/Write Enable and Disable
The CAT93HC46 powers up in the write disable state.
Any writing after power-up or after an EWDS (write
disable) instruction must first be preceded by the EWEN
(write enable) instruction. Once write is enabled, it will
remain enabled until power to the device is removed, or
the EWDS instruction is sent. The EWDS instruction can
be used to disable all CAT93HC46 write and clear
instructions, and will prevent any accidental writing or
clearing of the device. Data can be read normally from
the device regardless of the write enable/disable status.
Erase All
Upon receiving an ERAL command, the CS (Chip Select)
pin must be deselected for a minimum of tCSMIN. The
falling edge of CS will start the self-timed clear cycle of
all memory locations in the device. The clocking of the
SK pin is not necessary after the device has entered the
self-timed mode. (Note 1.) The ready/busy status of the
CAT93HC46 can be determined by selecting the device
and polling the DO pin. Once cleared, the contents of all
memory locations will return to a logical “1” state.
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
tCSMIN. The falling edge of CS will start the self-timed
data write to all memory locations in the device. The
clocking of the SK pin is not necessary after the device
has entered the self-timed mode. The ready/busy status
of the CAT93HC46 can be determined by selecting the
device and polling the DO pin. It is not necessary for all
memory locations to be cleared before the WRAL
command is executed. Once written, the contents of all
memory locations will return to a logical “0” state.
Note 1: After the last data bit has been sampled, Chip
Select (CS) must be brought Low before the next rising
edge of the clock (SK) in order to start the self-timed high
voltage cycle. This is important because if the CS is
brought low before or after this specific frame window,
the addressed location will not be programmed or erased.
Figure 4. Erase Instruction Timing
SK
CS
DI
DO
STANDBY
HIGH-Z
HIGH-Z
1
AN
AN-1
BUSY
READY
STATUS VERIFY
tSV
tHZ
tEW
tCS MIN
11
A0
Figure 3. Write Instruction Timing
SK
CS
DI
DO
tCS MIN
STANDBY
HIGH-Z
HIGH-Z
101
AN
AN-1
A0
DN
D0
BUSY
READY
STATUS
VERIFY
tSV
tHZ
tEW


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