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STD19NE06 Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STD19NE06
Descripción Electrónicos  N-CHANNEL 60V - 0.042 W - 19A IPAK/DPAK STripFET POWER MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD19NE06 Datasheet(HTML) 3 Page - STMicroelectronics

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STD19NE06
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 15 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
18
95
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48V ID = 30A VGS= 10V
35
10
12
50
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 48 V
ID = 30 A
RG = 4.7Ω,
VGS = 10 V
(Inductive Load, Figure 5)
10
41
60
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
19
76
A
A
VSD (*)
Forward On Voltage
ISD = 19 A
VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 19 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
85
190
4.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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