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BC638 Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza BC638
Descripción Electrónicos  High Current Transistors
Download  4 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BC638 Datasheet(HTML) 2 Page - ON Semiconductor

  BC638 Datasheet HTML 1Page - ON Semiconductor BC638 Datasheet HTML 2Page - ON Semiconductor BC638 Datasheet HTML 3Page - ON Semiconductor BC638 Datasheet HTML 4Page - ON Semiconductor  
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BC636, BC636–16, BC638, BC640, BC640–16
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
BC636
BC638
BC640
V(BR)CEO
–45
–60
–80
Vdc
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
BC636
BC638
BC640
V(BR)CBO
–45
–60
–80
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = 125°C)
ICBO
–100
–10
nAdc
µAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = –5.0 mAdc, VCE = –2.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
BC636
BC636–16
BC638
BC640
BC640–16
(IC = –500 mA, VCE = –2.0 V)
hFE
25
40
100
40
40
100
25
250
250
160
160
250
Collector–Emitter Saturation Voltage
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
–0.25
–0.5
–0.5
Vdc
Base–Emitter On Voltage
(IC = –500 mAdc, VCE = –2.0 Vdc)
VBE(on)
–1.0
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)
fT
150
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
9.0
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
110
pF
1. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle 2.0%.


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