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AZT1150 Datasheet(PDF) 4 Page - Power Semiconductors |
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AZT1150 Datasheet(HTML) 4 Page - Power Semiconductors |
4 / 4 page AZT1150 HIGH CURRENT PHASE CONTROL FINAL SPECIFICATION May 17 - Issue: 3 Distributed by 0 1000 2000 3000 4000 5000 6000 0 0,5 1 1,5 Forward Voltage [V] FORWARD CHARACTERISTIC Tj = 140 °C 0 5 10 15 20 25 30 35 40 45 0,001 0,01 0,1 1 10 100 t[s] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0 5 10 15 20 25 30 35 1 10 100 n° cycles SURGE CHARACTERISTIC Tj = 140 °C All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 2 G K 1 Ø6 .5 70 Ø1 3 177 104 92 80 G-K Termi nali A 2.8x0.8 V5 1 2 |
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