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NTE2354 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE2354 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE2354 Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT Applications: D High–definition color display horizontal deflection output Features: D Fast speed: tf = 100ns Typ D High breakdown voltage: VCBO = 1500V D High reliability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–to–Base Voltage, VCBO 1500V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–to–Emitter Voltage, VCEO 800V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–to–Base Voltage, VEBO 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC 10A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Collector Current, icp 25A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Dissipation (TC = +25°C), PC 150W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction Temperature, TJ +150 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –55 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICES VCE = 1500V, RBE = 0 – – 1.0 mA Collector Sustain Voltage VCEO(sus) IC = 100mA, IB = 0 800 – – V Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 mA Saturation Voltage Collector–to–Emitter VCE(sat) IC = 8A, IB = 2.0A – – 5.0 V Saturation Voltage Base–to–Emitter VBE(sat) IC = 8A, IB = 2.0A – – 1.5 V DC Current Gain hFE VCE = 5V, IC = 1.0A 8 – – – Storage Time tstg IC = 6A, IB1 = 1.2A, IB2 = –2.4A – – 3.0 µs Fall Time tf IC = 6A, IB1 = 1.2A, IB2 = –2.4A – 0.1 0.2 µs |
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