2SK3442 datasheet(1/6 Pages) TOSHIBA

No. de pieza	2SK3442

Descripción Electrónicos	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

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2SK3442

2002-08-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3442

Switching Regulator, DC-DC Converter and

Motor Drive Applications

· Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)

· High forward transfer admittance: ïYfsï = 28 S (typ.)

· Low leakage current: IDSS = 100 µA (VDS = 100 V)

· Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

100

V

Drain-gate voltage (RGS = 20 kW)

VDGR

100

V

Gate-source voltage

VGSS

±30

V

DC (Note 1)

ID

45

Drain current

Pulse

(Note 1)

IDP

180

A

Drain power dissipation

(Tc

= 25°C)

PD

125

W

Single pulse avalanche energy

(Note 2)

EAS

468

mJ

Avalanche current

IAR

45

A

Repetitive avalanche energy (Note 3)

EAR

12.5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

1.00

°C/W

Note 1: Please use devices on condition that the channel temperature

is below 150°C.

Note 2

VDD = 25 V, Tch = 25°C (initial), L = 373 mH, RG = 25 W, IAR = 45 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-97

TOSHIBA

2-9F1B

Weight: 0.74 g (typ.)

Notice:

Please use the S1 pin for gate input

signal return. Make sure that the

main current flows into S2 pin.

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