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FQP50N06 Datasheet(PDF) 2 Page - Thinki Semiconductor Co., Ltd.

No. de pieza FQP50N06
Descripción Electrónicos  50A,60V Heatsink Planar N-Channel Power MOSFET
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Fabricante Electrónico  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Página de inicio  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

FQP50N06 Datasheet(HTML) 2 Page - Thinki Semiconductor Co., Ltd.

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Electrical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 230
µH, I
AS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300
µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.06
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
--
--
1
µA
VDS = 48 V, TC = 150°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 25 A
--
0.018
0.022
gFS
Forward Transconductance
VDS = 25 V, ID = 25 A
--
22
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1180
1540
pF
Coss
Output Capacitance
--
440
580
pF
Crss
Reverse Transfer Capacitance
--
65
90
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 30 V, ID = 25 A,
RG = 25 Ω
--
15
40
ns
tr
Turn-On Rise Time
--
105
220
ns
td(off)
Turn-Off Delay Time
--
60
130
ns
tf
Turn-Off Fall Time
--
65
140
ns
Qg
Total Gate Charge
VDS = 48 V, ID = 50 A,
VGS = 10 V
--
31
41
nC
Qgs
Gate-Source Charge
--
8
--
nC
Qgd
Gate-Drain Charge
--
13
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
50
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
200
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 50 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 50 A,
dIF / dt = 100 A/µs
--
52
--
ns
Qrr
Reverse Recovery Charge
--
75
--
nC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
Page 2/6
Rev.08C
FQP50N06


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